Abstract
Metal—oxide—semiconductor (MOS) structures prepared on semi-insulating (SI) GaAs substrates are studied by a multichannel modified charge deep-level transient spectroscopy (DLTS) in the depletion mode. In this way an improvement in the selectivity, as compared with the standard DLTS, is obtained. Such an improvement is a prerequisite of a more effective decomposition of the total spectra into individual components, assuming that both the dielectric relaxation and trap-limited charge transients interfere with each other. In addition to the charge released from the dominant interface trap, the contribution from the thermal activation of the conductivity of the bulk SIGaAs material was modelled using an equivalent circuit scheme. The experimentally observed behaviour resembles strongly the results of our model calculations.
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