Abstract
The 308 nm laser ablation of InSb and GaSb has been investigated with the goal being to exert macroscopic control over the ablation plume. By taking advantage of the lower ionization potential of the group III element, In or Ga can be selectively ionized within the ablation plume by a 193 nm (6.4 eV) photon. The ionized species are removed from the plume with an electric field. As shown by x-ray photoelectron spectra, films subsequently deposited are diminished in In or Ga. A three-cycle deposition study demonstrates that a depleted layer of InSb can be deposited between two nondepleted layers of InSb.
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