Abstract
The successful fabrication of ultra‐thin films of CoFeB/Pt with strong perpendicular magnetic anisotropy and antiferromagnetic interfacial interlayer coupling on flexible polyimide substrates is demonstrated. Despite an increased surface roughness and defect density on the polyimide substrate, magnetic single layers of CoFeB still show sharp coercive switching. Magnetic Kerr imaging shows that the magnetization reversal is dominated by a greater density of nucleation sites than the identical film grown on Si. These layers maintain their magnetic characteristics down to a radius of curvature of 350 ± µm. Further, antiferromagnetically (AF) Ruderman‐Kittel‐Kasuya‐Yoshida (RKKY) coupled bilayers of CoFeB were fabricated which are robust under bending and the coupling strength is successfully modulated via interlayer engineering. Finally, a perpendicular synthetic antiferromagnetic (SAF) thin film grown on a polyimide substrate is patterned into straight 10 µm long nanowires down to 210 nm in width that displayed the robust switching characteristics of the thin film. These are extremely promising results for the fabrication of robust, flexible, magneto‐electronic, non‐volatile memory, logic, and sensor devices.
Highlights
The successful fabrication of ultra-thin films of CoFeB/Pt with strong perpendicular magnetic anisotropy and antiferromagnetic interfacial interlayer to nonvolatile memory applications and magnetic field sensors
A perpendicular synthetic antiferromagnetic (SAF) thin film grown on a polyimide substrate is patterned into straight 10 μm as the magnitude of the PMA[11,12] and interlayer exchange coupling effects.[12,13]
A representative polar magnetooptical Kerr effect (MOKE) magnetic hysteresis loop of a thin film of Ta(4)/Pt(6)/CoFeB(0.8)/Pt(2) with thicknesses in nm when grown on flat polyimide is shown in Figure 1b, and Figure 1c summarizes the remanent magnetization and coercivity of such a film when bent over a range of different radii
Summary
The successful fabrication of ultra-thin films of CoFeB/Pt with strong perpendicular magnetic anisotropy and antiferromagnetic interfacial interlayer to nonvolatile memory applications and magnetic field sensors. A perpendicular synthetic antiferromagnetic (SAF) thin film grown on a polyimide substrate is patterned into straight 10 μm as the magnitude of the PMA[11,12] and interlayer exchange coupling effects.[12,13] Further, the thickness of the magnetic layers in PMA multilayer stacks are often in the sub-nanometer range.
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