Abstract
AbstractElectrodeposition of Si films from a Si‐containing electrolyte is a cost‐effective approach for the manufacturing of solar cells. Proposals relying on fluoride‐based molten salts have suffered from low product quality due to difficulties in impurity control. Here we demonstrate the successful electrodeposition of high‐quality Si films from a CaCl2‐based molten salt. Soluble SiIV−O anions generated from solid SiO2 are electrodeposited onto a graphite substrate to form a dense film of crystalline Si. Impurities in the deposited Si film are controlled at low concentrations (both B and P are less than 1 ppm). In the photoelectrochemical measurements, the film shows p‐type semiconductor character and large photocurrent. A p–n junction fabricated from the deposited Si film exhibits clear photovoltaic effects. This study represents the first step to the ultimate goal of developing a cost‐effective manufacturing process for Si solar cells based on electrodeposition.
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