Abstract
Contact resistance is a major characteristic of organic transistors, and its importance has received renewed attention due to the recent revelation of mobility overestimation. In this article, we propose a method to describe the contact resistance as a closed-form compact equation of the materials, interfaces, and geometrical parameters. The proposed model allows us to quantitatively understand the correlation between charge-injection and transport properties, while providing a tool for performance prediction and optimization. This theory is applied to a set of experimentally fabricated devices to exemplify how to utilize the model in practice.
Highlights
The organic field-effect transistor (OFET) has experienced a tremendous progress over its more than three decades of history [1]
The initially widespread concerns about stability and reliability have been largely overcome, and the device performance has increased so much that the OFET technologies could successfully demonstrate the applicability to flat-panel displays [2], active-matrix imagers [3], radio-frequency identification tags [4], and many other areas
When an OFET is used as a test bed for material inspection, there is sometimes no better choice than picking up the simplistic current-voltage equation that is for an ideal field-effect transistor
Summary
The organic field-effect transistor (OFET) has experienced a tremendous progress over its more than three decades of history [1]. From the Boltzmann statistics, the source hole density at y = 0 (ps0 ) is injection-limited, written as we propose here a method to modify the theory toward a fully analytical and widely applicable compact model. The key finding was an orders-of-magnitude difference between ps and pch values under realistic conditions (pch ps ), rationalizing the emergence of Rc at the source edge (a low carrier density means a high resistance) We designated this transition zone with the length t as the physical Rc region. These results suggest the two important keys to the modeling. We note that retaining the absolute sign in |V G − V T | generalizes the model to both n- and p-type OFETs, with an obvious need to replace Nv and Eb by values associated with the lowest-unoccupied molecular orbital (LUMO) and the electron injection when applying it to an n-type device
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