Abstract
Planar superstrate CuInS2 (CIS) solar cell devices are fabricated using totally solution-processed deposition methods. These Cd-free devices are structured by FTO/TiO2/In2S3/CIS/carbon, where TiO2 and In2S3 are deposited by spray pyrolysis, and a CIS film is deposited using spin-coating followed by annealing at 250 °C. The pasted carbon layer is utilized as the anode. No further sulfurization or selenization is employed. The Cu/In ratio in the ink is found as a critical factor affecting the morphology and crystallinity of the film as well as the photovoltaic performance of the device. An optimum Cu/In = 1.05 results in large-grain films with sharp diffraction peaks and, subsequently, optimal series resistance and shunt conductance. It is also found that the chloride-based ink results in CIS films with considerably reduced metastable phases, compared to the conventional acetate-based inks. A current density of 23.6 mA cm−2 is obtained for the best devices, leading to a conversion efficiency of 4.1%.
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