Abstract
We evaluate the response of T-shaped, asymmetric, piezoresistive, micromachined cantilevers fabricated on p-type Si to 10-keV X-ray irradiation. The resonant frequency decreases by 25 ppm at 2.1 Mrad(SiO2), and partially recovers during post-irradiation annealing. An explanation of the results is proposed that is based on radiation-induced acceptor depassivation. This occurs because radiation-generated holes release hydrogen from previously passivated acceptors, causing the carrier concentration to increase, especially near the surface. Increased carrier concentration decreases Young’s modulus, resulting in a decrease in the cantilever resonant frequency. Finite element simulations show that the effect of a decreasing Young’s modulus in the surface region is consistent with the measured decrease in resonant frequency in the irradiated devices.
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