Abstract
Orientation dependences of channeling radiation total yield from relativistic 155–855MeV electrons at both 〈100〉 axial and (100) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam.
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