Abstract
A numerical model has been made to determine the effect of various geometric and thermal variables. The model consists of the following three blocks: (1) the the entire furnace system in which entire temperature distributions were calculated considering the effects of radiative heat exchange and gas flow; (2) a crystal and melt system in which temperature distributions and the crystal/melt interface were calculated, (3) thermal stress analysis by which resolved shear stress is obtained. Calculated results were in good agreement with experimental results; the temperature response to the change of heater power, the crystal/melt interface shape which was observed from growth striations and etch-pit densities on 4 inch diameter (100) oriented GaAs wafers.
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