Abstract
Line scans of micro‐ to submicron‐width stripe patterns with soft x‐ray (150 eV) microbeams formed by Wolter‐type mirrors were performed by detecting total photoelectron intensity. The samples were aluminum stripes delineated on a SiO2 wafer with identical width and spacing of either 0.7, 1, or 4 μm. The modulation of an image of the 4‐μm‐linewidth stripe pattern, which was obtained by scanning a 2.1 μm focused beam, was 0.33. The modulations of images for the 1‐μm‐linewidth stripe pattern and for the 0.7‐μm‐linewidth stripe pattern, both of which images were obtained by scanning a 1.8 μm focused beam, were, respectively, 0.12 and 0.08. We achieved the highest lateral resolution in one‐dimensional photoelectron imaging performed by grazing incidence mirrors.
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