Abstract
Thirty discrete heterojunction bipolar transistors fabricated in IBM's SiGe 7HP process were irradiated at dose rates of 0.013 rad(Si)/s, 0.11 rad(Si)/s and 171 rad(Si)/s to determine their sensitivity to total-dose irradiation and dose-rate effects. All devices tested showed less than 4% change in beta 0.6% change in turn on voltage. In addition, there was no measurable enhancement of degradation due to low dose-rate irradiation.
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