Abstract
Resistance switching memory devices based on cation transport through an electrolyte and redox reactions at the electrodes have been implemented in a commercial memory technology known as conductive bridging random access memory (CBRAM). In this letter, the number of bit errors and variations in the supply current of CBRAM circuits exposed to ionizing radiation is investigated and compared with common memory technologies. The results indicate that even after exposure to high levels of ionizing radiation, CBRAM devices show no degradation in memory retention, which suggests that the technology has high reliability capability when compared with existing nonvolatile memory solutions.
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