Abstract
Nb2O5-based metal–insulator–metal (MIM) diodes are ideal for neuromorphic computing applications because they exhibit desirable rectification, hysteresis, and capacitance characteristics without electroforming. We employ capacitance-frequency measurements to evaluate the total-ionizing-dose res- ponse of these devices to avoid measurement-induced disturbance of trap distributions caused by typical gate-voltage sweeping methods. Power-law dependences are observed for the low-frequency capacitance and conductance, consistent with hopping conduction of carriers through the oxides. Despite their high oxygen-vacancy densities, the Nb2O5-based MIM diodes are radiation tolerant up to at least Mrad(SiO2) doses.
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