Total Ionizing Dose Response of a 22-nm Compiled Fully Depleted Silicon-on-Insulator Static Random Access Memory

Abstract

The results of total ionizing dose (TID) experiments on fully-depleted silicon-on-insulator (FDSOI) static random access memory (SRAM) are presented. Using <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">60</sup> Co gamma irradiation, tests were conducted at multiple voltages and with and without read and write assists. The results demonstrate cell stability past 200 krad(Si) TID in standard operational modes. The impact of read and write assists and read timing via margin mode tests are examined. We also report input-output (IO) level translation circuit failures, as well as anomalous circuit failures attributable to IO at relatively low TID dose. Finally, we show post-TID anneal and low voltage SRAM results.