Abstract
The results of total ionizing dose irradiation on p-channel depletion mode MOSFETs fabricated on Ge-on-Si substrates with a TiN/TaN/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gate stack are reported. There is no significant change observed in gate leakage current, threshold voltage, or transconductance at the maximum total dose of 3 Mrad(SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ), but there is a reduction in the on/off current ratio of the devices as the total dose increases. This reduction is due to an increase in drain-substrate junction leakage current, which is dominated by an increase in surface generation current.
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