Abstract
The results of total ionizing dose irradiation on p-channel depletion mode MOSFETs fabricated on Ge-on-Si substrates with a TiN/TaN/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gate stack are reported. There is no significant change observed in gate leakage current, threshold voltage, or transconductance at the maximum total dose of 3 Mrad(SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ), but there is a reduction in the on/off current ratio of the devices as the total dose increases. This reduction is due to an increase in drain-substrate junction leakage current, which is dominated by an increase in surface generation current.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
