Abstract
Data retention capabilities of commercial battery-backed static random access memories (SRAMs) exposed to different ionizing dose are investigated. Pattern imprinting is observed for devices exposed to a total dose of 50 kR and above. Room temperature annealing and recovery is also recorded. A model for the pattern imprinting behavior in SRAMs is presented based on the general understanding of defects produced in MOSFETs due to ionizing radiation.
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