Total ionizing dose effects in shallow trench isolation oxides

Abstract

The peaked evolution of leakage current with total ionizing dose observed in transistors in 130 nm generation technologies is studied with field oxide field effect transistors (FOXFETs) that use the shallow trench isolation as gate oxide. The overall radiation response of these structures is determined by the balance between positive charge trapped in the bulk of the oxide and negative charge in defect centers at its interface with the silicon substrate. That these are mostly interface traps and not border traps is demonstrated through dynamic transconductance and variable-frequency charge-pumping measurements. These interface traps, whose formation is only marginally sensitive to the bias polarity across the oxide, have been observed to anneal at temperatures as low as 80 °C. At moderate or low dose rate, the buildup of interface traps more than offsets the increase in field oxide leakage due to oxide-trap charge. Consequences of these observations for circuit reliability are discussed.