Abstract
The carrier transport in uniaxial strained Si N channel metal oxide semiconductor field effect transistor (NMOSFET) irradiated by gamma rays is analysed. Based on the total dose irradiation effect, an analytical model for differential capacitance of uniaxial strained Si Nano NMOSFET is established. Based on this model, numerical calculation is carried out by MATLAB. The influence of geometric parameters and total dose on differential capacitance is simulated. Meanwhile, the simulation results match the calculation results very well, which validate the accuracy of the model. Therefore, the model provides a good reference for the irradiation reliability of uniaxial strained Si nano NMOSFET and the application of strained integrated circuits.
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