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Abstract
In this work, we present a study of hysteresis effect degradation induced by total dose irradiation in partially depleted SOI nMOSFETs with floating bodies. In addition to traditional linear kink effect, evidence is provided for a new hysteresis effect which occurs in output characteristics during the forward and reverse sweeps. For the first time, it is shown that at a sufficiently high irradiation level, the hysteresis behaviors both in transfer and output characteristics vanish due to interface traps and oxide trapped charge. 3D process and device simulations are performed to investigate the combined effects of charge trapping in oxide and interface traps.
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