Abstract
A gate controlled lateral PNP bipolar device has been designed in a commercial BiCMOS process to investigate its sensitivity to radiation-induced degradation. New experimental and simulated results concerning total dose effects are presented. The improved radiation hardness of this device working in its accumulation mode is shown. The influence of the gate potential during irradiation is studied as well as the effect of the gate potential on the degraded current characteristics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
