Total-current-spectroscopy studies of the electron states of the clean Si(100)2 x 1 and hydrogen-chemisorbed Si(100)1 x 1 surfaces.

Abstract

Experimental data have been obtained on the clean Si(100)2\ifmmode\times\else\texttimes\fi{}1 surface and hydrogen-chemisorbed Si(100)1\ifmmode\times\else\texttimes\fi{}1 surface with use of total-current spectroscopy. Relative to the valence-band maximum (VBM), two empty surface states at 1.8 and 0.7 eV and four occupied surface states at -0.25, -0.45, -6.0, and -8.4 eV are observed on the clean Si(100)2\ifmmode\times\else\texttimes\fi{}1 surface. Two hydrogen-induced surface states at -5.0 and -9.5 eV relative to the VBM on the hydrogen-saturated Si(100)1\ifmmode\times\else\texttimes\fi{}1 surface have been observed. A preliminary interpretation of these data is also given.