Abstract
We have investigated the electrical transport through strainedp-type Si/Si1 − xGex double-barrier resonant tunnelling diodes.The confinement shift for diodes with different well width,the shift due to a central potential spike in a well, and magnetotunnellingspectroscopy demonstrate that the first two resonances are due totunnelling through heavy-hole levels, whereas there is no sign of tunnelling throughthe first light-hole state. This establishes for the first time the conservation of the total angular momentum in valence bandresonant tunnelling.It is also shown that conduction through light-hole states is possible in many structures due to tunnelling of carriers from bulk emitter states.
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