Abstract
The article is devoted to the theoretical study of the magnetoelectric (ME) effect in the magnetostrictive-piezosemiconductor structure of yttrium iron garnet (YIG) - gallium arsenide (GaAs) in the torsional mode. Earlier, it was found that the ME effect significantly increases with the transition from the low-frequency range to the region of electromechanical resonance (EMR). There are known results on the study of the ME effect in the range of different EMR modes: planar, flexural, and shear. This article proposes to consider the ME effect in the torsional mode region in a layered YIG-GaAs composite. Interest in this phenomenon is associated both with the study of the newest effect, and with the possibility of studying the ME effect in the region of magnetoacoustic resonance, i.e. when the torsional mode coincides with the spin wave in the region of ferromagnetic resonance. The results obtained can find application in the design of new ME devices.
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