Abstract
Using high-resolution angle-resolved photoemission spectroscopy (ARPES), the topological property of the three-dimensional Bi(111) films grown on the Bi2Te3(111) substrate were studied. Very different from the bulk Bi, we found another surface band near the point besides the two well-known surface bands on the 30 nm films. With this new surface band, the bulk valence band and the bulk conduction band can be connected by the surface states in the Bi(111)/Bi2Te3 films. Our band mapping revealed odd number of Fermi crossings of the surface bands, which provided new experimental evidences that Bi(111)/Bi2Te3 films of a certain thickness can be topologically nontrivial in three dimension.
Highlights
Using high-resolution angle-resolved photoemission spectroscopy (ARPES), the topological property of the three-dimensional Bi(111) films grown on the Bi2Te3(111) substrate were studied
Topological insulators (TIs) possessing the topological surface state have been extensively studied in the last several years[1,2,3,4,5,6,7,8,9,10]
According to the Kramers theorem, S1 and S2 must be degenerate at the time-reversal invariant momenta (TRIM) points, Γ
Summary
Using high-resolution angle-resolved photoemission spectroscopy (ARPES), the topological property of the three-dimensional Bi(111) films grown on the Bi2Te3(111) substrate were studied. The reported ARPES spectra near M point on Bi(111) films are very similar to the bulk Bi27. We found three surface bands near Fermi level on the 30 nm films.
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