Abstract
We study a neutral honeycomb array of acceptors in a Group IV semiconductor. Tight-binding exhibits a band gap from different hopping of angular momentum ±32 and ±12 , forming a topological insulator (TI). The hopping is even under separate reversal of spatial and spin motions, unlike spin–orbit coupling. The TI is robust to Coulomb interactions and realistic electronic structure calculations show it survives for a range of spacings and distortions commensurate with the silicon growth surface, but has an instability towards spin density wave formation at large separations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
