Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu

Ching-Tzu Chen,Hsin Lin,Chuang-Han Hsu,Utkarsh Bajpai,Nicholas A Lanzillo,Gengchiau Liang

doi:10.1109/iedm13553.2020.9371996

Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu

Ching-Tzu Chen, Hsin Lin + Show 4 more

Open Access

https://doi.org/10.1109/iedm13553.2020.9371996

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Publication Date: Dec 12, 2020

Citations: 8

Affiliation: Institute of Physics, Academia Sinica, IBM Research - Thomas J. Watson Research Center, University of Delaware, IBM (United States), National University of Singapore

#Topological Semimetals #Interconnect Materials + Show 4 more

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Abstract

The resistance bottleneck in metal-interconnect scaling calls for new interconnect materials. This paper explores topological semimetals as a potential solution. After reviewing the desirable properties of topological semimetals for back-end-of-line (BEOL) interconnects, we use CoSi as an example to demonstrate the decreasing resistance-area product with scaling and provide material-search guidelines.

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