Topological Mott transistor with high current density based on hydrogen-terminated diamond

Abstract

The mechanism for the high drain-source current density, IDS≈ 1.3 A/mm, measured in a field effect transistor based on hydrogen-terminated diamond, is explained by the Mott insulator-metal transition (IMT). A local metal phase satisfying the Mott criterion for an IMT occurs in a p-type semiconductor formed by coupling between hydrogen and carbon on the surface of diamond. The local Mott metal phase on the surface of a p-type semiconductor leads to high carrier and current densities, and the transistor utilizing this effect is construed as a Mott power transistor. A channel material consisting of local Mott metal regions on the surface of a p-type semiconductor, such as hydrogen-terminated diamond, may be considered an inhomogeneous, topological Mott insulator.