Topological Insulators Bi[sub 2]Te[sub 3] and Bi[sub 2]Se[sub 3] Grown by MBE on (001) GaAs Substrates

X Liu,B J Kirby,K Tivakornsasithorn,H Cao,J K Furdyna,D J Smith,Y P Chen,Y.-H Zhang,J Fan,Michael B Santos,J Hagmann,N Sun,J Leiner,R E Pimpinella,Christopher J Stanton,S T Ruggiero,Giti A Khodaparast,M Dobrowolska

doi:10.1063/1.3671709

Topological Insulators Bi[sub 2]Te[sub 3] and Bi[sub 2]Se[sub 3] Grown by MBE on (001) GaAs Substrates

X Liu, B J Kirby + Show 16 more

https://doi.org/10.1063/1.3671709

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Publication Date: Jan 1, 2011

Citations: 5

#Bi2Te3 Bi2Se3 #Topological Insulators Bi + Show 8 more

Abstract
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Abstract

Bi2Te3 Bi2Se3 and their alloy films were successfully grown by molecular beam epitaxy (MBE) on (001) GaAs substrates. The structural properties of these films were investigated by Reflection high‐energy electron diffraction (RHEED), Atomic force microscopy (AFM), X‐ray diffraction (XRD), High‐resolution transmission electron microscopy (HRTEM) and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform. High‐field and low‐temperature magneto‐transport measurements on these films are carried out and discussed.

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