Topological Field-Effect Transistor Based on Quasi-Two-Dimensional Tellurium Flakes

Abstract

The emergent topological semimetals have received considerable attention for developing innovative devices, mainly due to their novel topological electronic properties with high robustness against external perturbations. Progress has been hindered, though, due to a lack of tunability. Here the authors address this challenge by constructing a field-effect device based on thin flakes of tellurium, a semiconductor with a chiral Weyl node. In this device, the conducting and topological states can be simultaneously switched electrostatically, yielding giant modulations of both channel conductivity and chiral-anomaly-induced magnetoresistance.