Topological band gaps and edge modes materialized by symmetric silicon-on-insulator photonic crystal slabs in the mid-IR range

Abstract

We successfully fabricated silicon-on-insulator (SOI) photonic crystal (PhC) slabs in which electromagnetic topological band gaps and edge modes were materialized for symmetric transverse-electric-like modes. Because the structure of our specimens can be regarded as symmetric about the horizontal middle plane of the PhC slab, their symmetric and antisymmetric eigenmodes were rigorously separated, so we could achieve genuine photonic band gaps for the former. We fabricated those specimens by electron beam lithography of the top Si layer of SOI wafers and successive plasma-enhanced chemical vapor deposition of a ${\mathrm{SiO}}_{2}$ capping layer. We confirmed the complete common band gap of topologically trivial and nontrivial PhCs and the topological edge modes on the boundary between them by angle-resolved reflection spectroscopy in the mid-infrared range. This is an observation of the common band gap and edge modes that materialized in symmetric PhC slabs without a membrane structure, that is, without the etching of a sacrificial layer under the PhC to increase the refractive-index contrast and the width of the common band gap.