Abstract
The preparation of a clean and defect-free GaAs surface is an ideal starting point for making GaAs based devices. Contaminants can also dramatically affect the adhesion of metals on GaAs. The effect of particulates or pits is more obvious. The purpose of this study was to evaluate differences in morphology and elemental composition of GaAs substrates subjected to commonly used wet etching techniques.The samples used in this study were cut from a polished LEC Zn-doped (100) GaAs wafer and were approximately 5x5 mm in size. Samples were treated by various means including organic solvents, freon vapor, acid etchants, alkaline etchants as well as no treatment. The solvents appeared to clean the wafer of particulates and polishing residues. The most extensive etching was observed on three samples now to be described.
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Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
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