Abstract
A new measurement technique is presented which is able to analyse defects in semiconductor wafers with pieces of information like DLTS. However, in contrast to DLTS the technique is non-destructive, contact- free and highly spatially resolving. Shallow and deep levels can be investigated in un-doped or doped semiconductors. In addition, photoconductivity and carrier lifetime topograms of wafers are possible with extremely low injection levels.
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