Topography induced preferential crystallization of thermally grown silicon dioxide films

Abstract

We have investigated the crystallization of the oxide layer that grows on a deposited silicon film in a high temperature furnace. The growth of large SiO2 crystal grains can be controlled by interfacial stress or surface topography. When the Si film is deposited on topographically patterned surfaces, the SiO2 grains are nucleated along the edges and extremities of the relief structure. A competition in which faster growing grains terminate slower growing grains results in an average growth direction perpendicular to the edges. Single crystal grains of α-cristobalite up to hundreds of microns in length can be grown in this fashion.