Top-emitting organic light-emitting devices based on silicon substrate using Ag electrode

Abstract

We have fabricated a very bright top-emitting organic light-emitting device directly based on silicon substrate utilizing the surface-modified Ag as anode. By inducing a thin silver oxide at the surface of Ag, the hole injection from Ag anode into organic light-emitting device is largely enhanced yet with rather high reflectivity retained. It is known to us that high-reflectivity bottom is essential for high-performance top-emitting organic light-emitting devices and Ag has the highest reflectivity for visible light among metals. The brightness of the top-emitting device in silicon using such surface-modified Ag anode reaches 14 090 cd m−2 at 13 V. To our knowledge, it is rather high in top-emitting devices based on silicon.