Abstract
Electrical contacts between metals and semiconductors are fundamentally important for practical semiconductor devices. This work reports the electrical characterization of nanowire arrays fabricated by a top-down approach, where electron beam lithography (EBL) and a highly anisotropic Cl 2 /H 2 /Ar inductively coupled plasma (ICP) reactive ion etching (RIE) is utilised to generate vertical arrays of InP nanowire arrays. Preliminary results show ohmic behavior from these arrays.
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