Abstract
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal arrangement of carbon atoms with the correct lattice vectors, observed by high-resolution scanning tunneling microscopy, confirms the formation of multiple graphene layers on top of the SiC substrates. The observation of n-type and p-type transition further verifies Dirac Fermions’ unique transport properties in graphene layers. The measured electron and hole mobilities on these fabricated graphene FETs are as high as 5400 and 4400cm2∕Vs, respectively, which are much larger than the corresponding values from conventional SiC or silicon.
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