Abstract
We report a highly efficient top-emission Si-based phosphor organic light emitting diode (PhOLED) with an ultrathin polycrystalline n-Si:Au film anode and a bottom Al mirror. This anode is formed by magnetron sputtering followed by Ni induced crystallization and then Au diffusion. By optimizing the thickness of the n-Si:Au film anode, the Au diffusion temperature, and the other parameters of the PhOLED, the highest current and power efficiencies of the n-Si:Au film anode PhOLED reached 85±9 cd/A and 80±8 lm/W, respectively, corresponding to an external quantum efficiency of 21±2% and a power conversion efficiency of 15±2%, respectively, which are about 60% and 110% higher than those of the indium tin oxide anode counterpart and 70% and 50% higher than those of the bulk n+-Si:Au anode counterpart, respectively.
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