Abstract
A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.
Highlights
The field of micro/nanoelectromechanical systems (MEMS/NEMS) is increasing its presence in many application areas because the advantages that they offer in terms of enhanced portability, reduced power consumption and reduced cost
In this paper we present a capacitively actuated and piezoresistively transduced polysilicon double-clamped beam resonator fabricated and monolithically integrated in a commercial Complementary Metal Oxide Semiconductor (CMOS)
The electrostatic actuation for the resonant NEMS operation is performed through the fixed polysilicon electrode placed 100 nm besides the clamped-clamped beam (CC-beam)
Summary
The field of micro/nanoelectromechanical systems (MEMS/NEMS) is increasing its presence in many application areas because the advantages that they offer in terms of enhanced portability, reduced power consumption and reduced cost. Scaling down capacitive transduced MEMS resonators provides huge motional impedances making very challenging the monolithical integration of oscillators or self-actuated systems [8]. In this paper we present a capacitively actuated and piezoresistively transduced polysilicon double-clamped beam resonator fabricated and monolithically integrated in a commercial CMOS technology. It presents two main advantages in comparison with previous examples: (a) smaller dimensions (the beam dimensions are 500 nm width and 282 nm thick); and (b) the entire body of the resonator is used as a piezoresistor. Comparing the response of the same device for capacitive transduction and piezoresistive transduction allows to establish the material properties (i.e. gauge factor for the integrated polysilicon layer)
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