Abstract
The toggle-switching behavior for circular and elliptic cylinder shaped memory cells of weakly coupled synthetic antiferromagnet with a diameter and thickness (ferromagnetic layer) ranging from 200 to 400 and from 2.5to5.0nm, respectively, has been studied by micromagnetic simulation. The critical fields for a circular cylinder are much larger than those predicted by a single domain model. This is due to the formation of edge domains resulting in a so-called S state. The elliptic cylinder with an aspect ratio of >1.2 is found to be necessary to prevent the increase of the start field by the edge domains.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
