ToF-SIMS Study of Pulsed Laser Melting Energy Density on Ti Implanted Si for Intermediate Band

Abstract

AbstractAn exhaustive study on the resulting impurity profile in Si samples implanted with Ti with high doses and subsequently Pulsed-Laser Melting (PLM) annealed is presented. Two different effects are shown to be present in the two different stages of the annealing. In the melting stage the box-shaped effect tends to increase the thickness of the implanted layer and to decrease the maximum peak concentration as the energy density of the annealing increases. On the contrary, in the solidifying stage, the snow-plow effect decreases the thickness of the layer and increases the maximum peak concentration as the energy density of the annealing increases. Moreover, as a direct consequence of the snow-plow effect, part of the impurities is expelled from the sample by the surface.