Abstract
The surface damage formed on a clean Si(100)-2 × 1 surface by low-energy Ar ion bombardment has been studied in situ using the impact collision ion scattering spectroscopy (ICISS) method and the time-of-flight (TOF) technique. The Ar ion energy was 1 keV and the ion doses were in the range of 10 14-10 15ions/cm 2. Channeling and focusing effects were observed very clearly on a clean and well-ordered surface. With the increase of the Ar ion dose, such channeling and focusing effects gradually disappear. The annealing process of the surface damage was also investigated.
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