To Fill the Gap Between Si-ULSI and Nanodevices

Abstract

A gap between silicon ULSI and nanodevices and a measure to fill the gap are described. It is shown that there are three phases in the development of silicon nanodevices. In the first phase where we are now, the quantum and single electron charging effects are just troublesome phenomena for ULSI. The most critical and important phase is the second phase, in which new physical phenomena are positively utilized in ULSI and nanodevices are merged into ULSI. The third phase will be the realization of silicon nanodevices that fully utilize the quantum and single electron charging effects. Some examples of favorable quantum and single electron effects that would break the miniaturization limitation of ULSI are reviewed.