Abstract
Tm3+ doped Ga–As–S chalcogenide glass samples were produced using As2S3 pure glass as starting materials. Their photoluminescence properties were characterized and strong emission bands were observed at 1.2μm (1H5→3H6), 1.4μm (3H4→3F4) and 1.8μm (3F4→3H6) under excitation wavelengths of 698nm and 800nm. The thulium and gallium concentrations were optimized to achieve the highest photoluminescence efficiency. From the optimal composition, a Tm3+ doped Ga–As–S fiber was drawn and its optical properties were studied.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.