Abstract
Tm3+ doped Ga–As–S chalcogenide glass samples were produced using As2S3 pure glass as starting materials. Their photoluminescence properties were characterized and strong emission bands were observed at 1.2μm (1H5→3H6), 1.4μm (3H4→3F4) and 1.8μm (3F4→3H6) under excitation wavelengths of 698nm and 800nm. The thulium and gallium concentrations were optimized to achieve the highest photoluminescence efficiency. From the optimal composition, a Tm3+ doped Ga–As–S fiber was drawn and its optical properties were studied.
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