Abstract
A lattice-matched, 5 at.% Tm, 0.5 at.% Ho-codoped, 5.77 µm-thick KY0.58Gd0.22Lu0.20(WO4)2 active layer with optimized refractive index contrast is grown by liquid phase epitaxy on the (3 1 0) face of pure KY(WO4)2 substrate. Laser operation at 2051 nm (5I7 → 5I8 transition of the Ho3+ ion) is demonstrated with this waveguide pumped at 794 nm. The maximum continuous wave output power amounts to 1.9 mW at 2051 nm corresponding to a slope efficiency of 10.5%. The laser threshold is as low as 1.5 mW of absorbed pump power. The developed structure is promising for single-transverse-mode channel holmium waveguide lasers. Laser operation in 3 at.% Tm-singly doped 4.41 µm thick layer grown on the (3 1 0)-oriented substrate is also demonstrated at 1841 nm with a slope efficiency of 31%.
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