Abstract
Thermoluminescence (TL) and optically stimulated luminescence (OSL) characteristics of Al 2 O 3 :Si,Ti phosphor have been studied. Its TL and OSL sensitivity is 1/9th and 1/120th respectively, compared to that of Al 2 O 3 :C commercial phosphor. Its dose vs. OSL response is linear up to 5 Gy, beyond which it shows slight supralinearity up to a dose of 3 × 10 3 Gy . The main TL peak at about 276 °C shows maximum emission at about 405 nm. Deconvolution of continuous-wave OSL (CW-OSL) decay curve suggests three individual CW-OSL decay components corresponding to photoionization cross-sections of 1.2 × 10 - 18 , 2.7 × 10 - 19 , 7.0 × 10 - 20 cm 2 . For an absorbed dose of 2 × 10 3 Gy followed by annealing at 530 °C for 20 min and a test gamma dose of 1 Gy, the radiation-induced sensitization factor for the CW-OSL response was 2.1. This can be explained by filling of deep traps ( > 530 ∘ C ) . The photoluminescence (PL) spectrum of Al 2 O 3 :Si,Ti shows emission at 410 nm for excitation at 240 nm. From PL measurements we could not detect any F and F + center emissions in the Al 2 O 3 :Si,Ti phosphor which is prepared under highly oxidizing conditions. The emission around 410 nm matches the emission reported in the literature for Ti 4 + ions in Al 2 O 3 .
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