Abstract
Ti/WSi/Ni contact to n-type SiCN was investigated using the circular transmission line method. Current-voltage characteristics, X-ray diffraction and X-ray photoelectron spectroscopy were used to characterize the contacts before and after annealing. It is shown that the conducting behavior of the contacts is dependent on the annealing temperature. After annealing at 900 °C or above, ohmic contacts with specific contact resistivity were achieved. The 1000-°C-annealed contact exhibits the lowest specific contact of 3.07 × 10−5 Ω · cm2. The formation of ohmic contact with low specific contact resistivity was discussed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
