Titanium–silicon and silicon dioxide reactions controlled by low temperature rapid thermal annealing

Abstract

Auger electron spectroscopy measurements coupled with sputter depth profiling demonstrate that titanium silicide forms between Ti and SiO2 at conventional annealing temperatures in UHV and that rapid thermal annealing at relatively low temperatures can enhance silicide formation at Ti–Si relative to Ti–SiO2 interfaces within the same thin film structure. Reactions and diffusion at these interfaces occur on a short time scale (seconds) at low temperatures (400–700 °C), yet resemble interactions obtained at multimicron thicknesses. UHV fabrication and analysis reveals that these reactions are sensitive to interface contamination and sputter-induced disorder.