Abstract
We synthesized stable and adherent TiSi2 layers by one-step excimer-laser irradiation of Ti films deposited on Si wafers. By multipulse laser irradiation a regime was got when Ti covering Si windows, opened into SiO2 layer grown on the Si substrate, was completely reacted, while the neighbour Ti covering the SiO2 interlayer was entirely expelled. This means that a self-aligned silicide layer (salicide) was formed. Moreover, it is shown that by mulitpulse irradiation of Ti/Si samples in nitrogen atmosphere, it is possible to obtain multilevel TiN/TiSi2/Si structures with titanium silicide formed at the Ti-Si interface and titanium nitride formed at the Ti surface.© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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