Abstract
Titanium disilicide is formed by thermal annealing of amorphous Si/Ti multilayers, deposited on monocrystalline silicon by alternate electron-gun evaporation of Si and Ti. The bilayer periodicity was equal to 4. The bilayer Si/Ti thickness ratio was varied between 2 and 3 and its influence on the film properties (stoichiometry, surface and interface roughness and resistivity) was studied and compared to the properties of a silicide of the same thickness, formed by annealing of a single deposited Ti layer on monocrystalline silicon. The characterization techniques used are: x-ray-diffraction, Rutherford backscattering, scanning electron microscopy, surface profilometry, and electrical measurements. The reaction rate of deposited Ti with monocrystalline silicon for the formation of TiSi2 is also compared in a special experiment to that of deposited Ti with amorphous Si (α-Si).
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