Abstract
A facile strategy is developed for the fabrication of titanium dioxide/zinc indium sulfide (TiO2/ZnIn2S4) hetero-junction photoanode with an adjustable ZnIn2S4 doping content and application in the dye-sensitized solar cell (DSSC). Comparing to the pure TiO2, TiO2/ZnIn2S4 hetero-junction materials demonstrate an enhanced light utilizing efficiency, a reduced recombination rate of electron-hole pairs, and an accelerated migration process of photoinduced electrons. Due to above merits, DSSC based on TiO2/ZnIn2S4 hetero-junction photoanode achieves a greatly enhanced short-circuit current density, leading to an improved photoelectric conversion efficiency of 8.09% under full sunlight illumination (100 mW cm−2, AM 1.5 G), which is almost 14.43% higher than that of the pure TiO2-based DSSC (7.07%).
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